A tech partnership between Intel and Micron, Intel Micron Flash Technologies (IMTF), has developed 3D MLC NAND technology which will facilitate the creation of 10 Terabyte Solid State Drives within two years. The move was announced in a webcast to Intel investors last week. Rob Crooke, Vice President and General Manager of the Intel Non-Volitile Memory Solutions Group, revealed details of the next-gen flash drives, which will include 32 planar layers, c4 billion interconnect pillars between layers, 256Gbit – 32GB – of capacity in a die using MLC (2 bits/cell) NAND, and 348Gbit – 48GB – using TLC (3 bits/cell) NAND.
Crooke predicts 10TB SSD drives in two years, so expect them by the start of 2017. He also spoke about new 2mm thick 1B drives, intimating a potential leap in smartphone and tablet storage is imminent.
Source: The Register
According to a new report, the GeForce RTX 5090 GPU will be very expensive. It…
A new AMD processor in the form of an engineering model has been leaked in…
SK Hynix has claimed to be the first company to mass-produce 321-layer NAND memory chips.…
SOUNDS GREAT – Full stereo sound (12W peak power) gives your setup a booming audio…
Special Edition Yoshi design Ergonomic controller shape with Nintendo Switch button layout Detachable 10ft (3m)…
Fluid Motion: These flight rudder pedals are smooth and accurate that enable precise control over…