Samsung Reveals 512GB Capacity DDR5 Memory

Samsung has today announced that it has expanded its DDR5 DRAM memory portfolio with the industry’s first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200 megabits per second (Mbps), the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI), and machine learning (ML), as well as data analytics applications.

Samsung 512GB DDR5 Memory

Samsung’s DDR5 will utilize highly advanced HKMG technology that has been traditionally used in logic semiconductors. With continued scaling down of DRAM structures, the insulation layer has thinned, leading to a higher leakage current. By replacing the insulator with HKMG material, Samsung’s DDR5 will be able to reduce the leakage and reach new heights in performance. This new memory will also use approximately 13% less power, making it especially suitable for datacenters where energy efficiency is becoming increasingly critical.

Where Can I Learn More?

The HKMG process was adopted in Samsung’s GDDR6 memory in 2018 for the first time in the industry. By expanding its use in DDR5, Samsung is further solidifying its leadership in next-generation DRAM technology. Leveraging through-silicon via (TSV) technology, their DDR5 stacks eight layers of 16Gb DRAM chips to offer the largest capacity of 512GB. TSV was first utilized in DRAM in 2014 when the tech giant introduced server modules with capacities up to 256GB.

If you do, therefore, want to learn more about this and other Samsung products, you can check out their official website via the link here!

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