Samsung Working on 10nm 3DS DDR4 DRAM for In-Memory Computing

Samsung is no stranger to innovation, even if it doesn’t quite come out as they planned. That said, they’re apparently working valiantly towards their next generation 3DS (three-dimensional stacked) DRAM modules that’ll be on a 10-nm process. Initially, they’re developing this in partnership with SAP for in-memory computing, a burgeoning way of handling massive amounts of data quickly in databases.

Sure, this doesn’t exactly mean much for the consumer at the moment, but it’s the magical new methods and things that get discovered on the journey to new technology will inevitably trickle down and be applied to every day consumer technology. Just listen to what they’re saying about where they’re going with this. They have high hopes for their enterprise applications. This could very well become a competitor to Intel’s own 3D XPoint technology that’s coming to ensure even faster SSDs.

“With our latest 10nm-class DRAM technology, Samsung Electronics will be able to provide more advanced solutions for SAP’s next-generation in-memory system in a highly efficient manner,” said Dr. Young-Hyun Jun, President of the Memory Business, Samsung Electronics. “Samsung will continue solidifying its technology leadership in the high-density memory market through ongoing innovation.”

Samsung already has 24TB of 20-nm, 128GB 3DS DDR4 running SAP’s applications in memory and hope to be able to do the same with 256GB 3DS modules in the near future. That, of course, takes time and money. And a big investor, of which SAP can provide both an immediately applicable reason to develop it and an influx in capital to make it happen. This partnership won’t have consequences for us immediately, but very soon after we might see in-memory computing come to everyone. It’ll be incredibly fast, like running a RAM Disk, but with far more storage and far more reliability.