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Silicon Motion Introduces the SM689 and SM681 FerriSSDs

Another Innovation from Silicon Motion

Last year, Silicon Motion announced their first single-chip 3D NAND SSD. Now they are announcing that they have the world’s first PCIe NVMe single-chip SSDs with Enterprise-grade data protection features. The SM689 and SM681 joins the SM601 (PATA) and SM619 (SATA) solutions in the Silicon Motion FerriSSD family. Just like the previous drives, the SM689 and SM681 are ideal for computing applications in industrial, commercial, enterprise and automotive end-markets.

What Features Does the SM689 and SM681 FerriSSDs Have?

Both drives share similar features, including the following.

End-to-end data path protection, which applies error correction code (ECC) to the SSD’s SRAM and DRAM buffers as well as to the primary NAND Flash memory array
DRAM data cache to ensure data programming and enable data redundancy, without delaying host processor operations
Hybrid Zone which enables a single disk to be partitioned into single-level cell (SLC) and multi-level cell/three-level cell (MLC/TLC) zones, enabling faster access speeds and data retention
Intelligent Scan/DataRefresh protects against the higher data loss from operating at high temperatures
NANDXtend technology incorporating Silicon Motion’s proprietary 4th generation high-performance LDPC ECC engine with RAID. This ensures better data integrity even in extreme physical environments
16mm x 20mm (SM689) and 11.5mm x 13mm (SM681) single-chip package
Supports industrial temperatures from -40 to 85 degrees Celsius
Densities ranging from 16GB to 256GB at launch

The distinction however, is that the SM681 is a DRAMless solution. In terms of performance, the SM689 supports PCIe Gen 3×4 interface while SM681 supports PCI Gen 3×2 interface. This results in sequential read speed of up to 1.45GB/s and sequential write speed of up to 650MB/s.

Silicon Motion intends to show off these drives in person at the Embedded World Exhibition in Nuremberg, Germany from February 27 through March 1 2018.

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