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SK Hynix Introduces 72-Layer 3D NAND Flash

SK Hynix Introduces 72-Layer 3D NAND Flash

SK Hynix just introduced the industry’s first 72-Layer 256 Gb 3D NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. That is an impressive 1.5 times what is present in the current 48-Layer 3D NAND which already is being mass produced.

SK Hynix 72-Layer 3D NAND

SK Hynix launched their 36-Layer 128 Gb 3D NAND chips in April 2016. From there on, they started the mass production of the 48-Layer 256 Gb 3D NAND chips in November 2016. Just five months later, the company is ready with this new 72-Layer 256 Gb 3D NAND chips. That is a doubling of layers in one year and it secures SK Hynix as one of the industry’s finest product portfolios. “The technological achievement of this 72-Layer 256 Gb 3D NAND compares figuratively to the difficulty of approximately 4 billion 72-storied skyscrapers on a dime.”

The chip isn’t just impressive from a construction point of view, it also is so in regard to its performance.

The chip achieves approximately 30 percent more manufacturing productivity over its 48-Layer predecessor. It does so by stacking 1.5 times more cells while utilising existing mass production facilities. It also brings a high-speed circuit design into the new chip. With an internal operation speed that is two times faster while the read and write performance goes up by 20 percent is nice.

“With the introduction of this industry’s highest productivity 3D NAND, SK Hynix will mass produce the 256Gb 3D NAND in the second half of this year to provide this to worldwide business clients for optimum use in storage solutions,” said vice president Jong Ho Kim, the Head of Marketing Division. “The company plans to expand the usage of the product to SSDs and mobile gadgets such as smart phones to further improve its business structure weighted towards DRAM” he added.

What about the Availability?

With any luck, we’ll see 512Gbit chips made with this 72-Layer technology as soon as Q3 or Q4 2017.

Bohs Hansen

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